D882M Transistor Datasheet & Specifications
NPN
TO-252
High Power
HT(Shenzhen Jinyu Semicon)
VCEO
30V
Ic Max
3A
Pd Max
1.25W
hFE Gain
-
Quick Reference
The D882M is a NPN bipolar transistor in a TO-252 package by HT(Shenzhen Jinyu Semicon). This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the D882M datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 90MHz | Transition speed (fT) |
| VCEsat | 400@1A,2V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SD1760TLR | NPN | TO-252 | 50V | 3A | 15W |
| MJD44H11T4G | NPN | TO-252 | 80V | 8A | 50W |
| ZXT1053AKTC | NPN | TO-252 | 75V | 5A | 4W |
| MJD44H11 | NPN | TO-252 | 80V | 8A | 1.75W |
| 2SD882 | NPN | TO-252 | 30V | 3A | 1.25W |
| MJD31C | NPN | TO-252 | 100V | 3A | 1.56W |
| MJD31CQ | NPN | TO-252 | 100V | 3A | 1.6W |
| 2SD1802T | NPN | TO-252 | 50V | 3A | 1W |
| MJD44H11T4G-DW | NPN | TO-252 | 80V | 8A | 20W |
| 2SD882(TO-252) | NPN | TO-252 | 30V | 3A | 1.25W |