MJD44H11T4G Transistor Datasheet & Specifications
NPN
TO-252
High Power
JSMSEMI
VCEO
80V
Ic Max
8A
Pd Max
50W
hFE Gain
60
Quick Reference
The MJD44H11T4G is a NPN bipolar transistor in a TO-252 package by JSMSEMI. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the MJD44H11T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 50W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD44H11 | NPN | TO-252 | 80V | 8A | 1.75W |
| MJD44H11T4G-DW | NPN | TO-252 | 80V | 8A | 20W |
| MJD41C(MS) | NPN | TO-252 | 100V | 9A | 1.25W |
| BTC1510F3L-TN3-R | NPN | TO-252 | 150V | 10A | 1.1W |
| MJD122 | NPN | TO-252 | 100V | 8A | 1.75W |