MJD44H11 Transistor Datasheet & Specifications
NPN
TO-252
General Purpose
GOODWORK
VCEO
80V
Ic Max
8A
Pd Max
1.75W
hFE Gain
60
Quick Reference
The MJD44H11 is a NPN bipolar transistor in a TO-252 package by GOODWORK. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the MJD44H11 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | GOODWORK | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 1.75W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD44H11T4G | NPN | TO-252 | 80V | 8A | 50W |
| MJD44H11T4G-DW | NPN | TO-252 | 80V | 8A | 20W |
| MJD41C(MS) | NPN | TO-252 | 100V | 9A | 1.25W |
| BTC1510F3L-TN3-R | NPN | TO-252 | 150V | 10A | 1.1W |
| MJD122 | NPN | TO-252 | 100V | 8A | 1.75W |