MJD44H11T4G-DW Transistor Datasheet & Specifications
NPN
TO-252
High Power
DOWO
VCEO
80V
Ic Max
8A
Pd Max
20W
hFE Gain
60
Quick Reference
The MJD44H11T4G-DW is a NPN bipolar transistor in a TO-252 package by DOWO. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the MJD44H11T4G-DW datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOWO | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 20W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD44H11T4G | NPN | TO-252 | 80V | 8A | 50W |
| MJD44H11 | NPN | TO-252 | 80V | 8A | 1.75W |
| MJD41C(MS) | NPN | TO-252 | 100V | 9A | 1.25W |
| BTC1510F3L-TN3-R | NPN | TO-252 | 150V | 10A | 1.1W |
| MJD122 | NPN | TO-252 | 100V | 8A | 1.75W |