MJD31C Transistor Datasheet & Specifications
NPN
TO-252
General Purpose
Huixin
VCEO
100V
Ic Max
3A
Pd Max
1.56W
hFE Gain
80
Quick Reference
The MJD31C is a NPN bipolar transistor in a TO-252 package by Huixin. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the MJD31C datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Huixin | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.56W | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | 1.2V@3A,375mA | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD31CQ | NPN | TO-252 | 100V | 3A | 1.6W |
| 2SD1816L-R-TN3-R | NPN | TO-252 | 100V | 4A | 1W |
| BU406D | NPN | TO-252 | 150V | 7A | 65W |
| MJD122(MS) | NPN | TO-252 | 100V | 6A | 1.25W |
| 2SD1816L-S-TN3-R | NPN | TO-252 | 100V | 4A | 1W |
| MJD122 | NPN | TO-252 | 100V | 5A | 65W |
| MJD41C(MS) | NPN | TO-252 | 100V | 9A | 1.25W |
| BTC1510F3L-TN3-R | NPN | TO-252 | 150V | 10A | 1.1W |
| MJD122 | NPN | TO-252 | 100V | 8A | 1.75W |
| 2SD1815S-TL-E | NPN | TO-252 | 100V | 3A | 20W |