2SD1816L-R-TN3-R Transistor Datasheet & Specifications

NPN TO-252 General Purpose UTC
VCEO
100V
Ic Max
4A
Pd Max
1W
hFE Gain
100

Quick Reference

The 2SD1816L-R-TN3-R is a NPN bipolar transistor in a TO-252 package by UTC. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the 2SD1816L-R-TN3-R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic4ACollector current
Pd1WPower dissipation
DC Current Gain100hFE / Beta
Frequency180MHzTransition speed (fT)
VCEsat150mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BU406D NPN TO-252 150V 7A 65W
MJD122(MS) NPN TO-252 100V 6A 1.25W
2SD1816L-S-TN3-R NPN TO-252 100V 4A 1W
MJD122 NPN TO-252 100V 5A 65W
MJD41C(MS) NPN TO-252 100V 9A 1.25W
BTC1510F3L-TN3-R NPN TO-252 150V 10A 1.1W
MJD122 NPN TO-252 100V 8A 1.75W