MJD31CQ Transistor Datasheet & Specifications
NPN
TO-252
General Purpose
YANGJIE
VCEO
100V
Ic Max
3A
Pd Max
1.6W
hFE Gain
10
Quick Reference
The MJD31CQ is a NPN bipolar transistor in a TO-252 package by YANGJIE. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the MJD31CQ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.6W | Power dissipation |
| DC Current Gain | 10 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | 1.2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD31C | NPN | TO-252 | 100V | 3A | 1.56W |
| 2SD1816L-R-TN3-R | NPN | TO-252 | 100V | 4A | 1W |
| BU406D | NPN | TO-252 | 150V | 7A | 65W |
| MJD122(MS) | NPN | TO-252 | 100V | 6A | 1.25W |
| 2SD1816L-S-TN3-R | NPN | TO-252 | 100V | 4A | 1W |
| MJD122 | NPN | TO-252 | 100V | 5A | 65W |
| MJD41C(MS) | NPN | TO-252 | 100V | 9A | 1.25W |
| BTC1510F3L-TN3-R | NPN | TO-252 | 150V | 10A | 1.1W |
| MJD122 | NPN | TO-252 | 100V | 8A | 1.75W |
| 2SD1815S-TL-E | NPN | TO-252 | 100V | 3A | 20W |