2SD1815S-TL-E Transistor Datasheet & Specifications

NPN TO-252 High Power onsemi
VCEO
100V
Ic Max
3A
Pd Max
20W
hFE Gain
40

Quick Reference

The 2SD1815S-TL-E is a NPN bipolar transistor in a TO-252 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the 2SD1815S-TL-E datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic3ACollector current
Pd20WPower dissipation
DC Current Gain40hFE / Beta
Frequency180MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJD31C NPN TO-252 100V 3A 1.56W
MJD31CQ NPN TO-252 100V 3A 1.6W
2SD1816L-R-TN3-R NPN TO-252 100V 4A 1W
BU406D NPN TO-252 150V 7A 65W
MJD122(MS) NPN TO-252 100V 6A 1.25W
2SD1816L-S-TN3-R NPN TO-252 100V 4A 1W
MJD122 NPN TO-252 100V 5A 65W
MJD41C(MS) NPN TO-252 100V 9A 1.25W
BTC1510F3L-TN3-R NPN TO-252 150V 10A 1.1W
MJD122 NPN TO-252 100V 8A 1.75W