2SD1760TLR Transistor Datasheet & Specifications

NPN TO-252 High Power ROHM
VCEO
50V
Ic Max
3A
Pd Max
15W
hFE Gain
82

Quick Reference

The 2SD1760TLR is a NPN bipolar transistor in a TO-252 package by ROHM. This datasheet provides complete specifications including 50V breakdown voltage and 3A continuous collector current. Download the 2SD1760TLR datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic3ACollector current
Pd15WPower dissipation
DC Current Gain82hFE / Beta
Frequency6MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJD44H11T4G NPN TO-252 80V 8A 50W
ZXT1053AKTC NPN TO-252 75V 5A 4W
MJD44H11 NPN TO-252 80V 8A 1.75W
MJD31C NPN TO-252 100V 3A 1.56W
MJD31CQ NPN TO-252 100V 3A 1.6W
2SD1802T NPN TO-252 50V 3A 1W
MJD44H11T4G-DW NPN TO-252 80V 8A 20W
2SD1816L-R-TN3-R NPN TO-252 100V 4A 1W
BU406D NPN TO-252 150V 7A 65W
MJD122(MS) NPN TO-252 100V 6A 1.25W