2SD1802T Transistor Datasheet & Specifications
NPN
TO-252
General Purpose
Shikues
VCEO
50V
Ic Max
3A
Pd Max
1W
hFE Gain
560
Quick Reference
The 2SD1802T is a NPN bipolar transistor in a TO-252 package by Shikues. This datasheet provides complete specifications including 50V breakdown voltage and 3A continuous collector current. Download the 2SD1802T datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Shikues | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 560 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 600nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SD1760TLR | NPN | TO-252 | 50V | 3A | 15W |
| MJD44H11T4G | NPN | TO-252 | 80V | 8A | 50W |
| ZXT1053AKTC | NPN | TO-252 | 75V | 5A | 4W |
| MJD44H11 | NPN | TO-252 | 80V | 8A | 1.75W |
| MJD31C | NPN | TO-252 | 100V | 3A | 1.56W |
| MJD31CQ | NPN | TO-252 | 100V | 3A | 1.6W |
| MJD44H11T4G-DW | NPN | TO-252 | 80V | 8A | 20W |
| 2SD1816L-R-TN3-R | NPN | TO-252 | 100V | 4A | 1W |
| BU406D | NPN | TO-252 | 150V | 7A | 65W |
| MJD122(MS) | NPN | TO-252 | 100V | 6A | 1.25W |