ZXT1053AKTC Transistor Datasheet & Specifications

NPN TO-252 High Power DIODES
VCEO
75V
Ic Max
5A
Pd Max
4W
hFE Gain
300

Quick Reference

The ZXT1053AKTC is a NPN bipolar transistor in a TO-252 package by DIODES. This datasheet provides complete specifications including 75V breakdown voltage and 5A continuous collector current. Download the ZXT1053AKTC datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO75VBreakdown voltage
Ic5ACollector current
Pd4WPower dissipation
DC Current Gain300hFE / Beta
Frequency140MHzTransition speed (fT)
VCEsat350mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current10nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJD44H11T4G NPN TO-252 80V 8A 50W
MJD44H11 NPN TO-252 80V 8A 1.75W
MJD44H11T4G-DW NPN TO-252 80V 8A 20W
BU406D NPN TO-252 150V 7A 65W
MJD122(MS) NPN TO-252 100V 6A 1.25W
MJD122 NPN TO-252 100V 5A 65W
MJD41C(MS) NPN TO-252 100V 9A 1.25W
BTC1510F3L-TN3-R NPN TO-252 150V 10A 1.1W
MJD122 NPN TO-252 100V 8A 1.75W