2SD882 Transistor Datasheet & Specifications
NPN
TO-252
General Purpose
MSKSEMI
VCEO
30V
Ic Max
3A
Pd Max
1.25W
hFE Gain
400
Quick Reference
The 2SD882 is a NPN bipolar transistor in a TO-252 package by MSKSEMI. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the 2SD882 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | 400 | hFE / Beta |
| Frequency | 90MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SD1760TLR | NPN | TO-252 | 50V | 3A | 15W |
| MJD44H11T4G | NPN | TO-252 | 80V | 8A | 50W |
| ZXT1053AKTC | NPN | TO-252 | 75V | 5A | 4W |
| MJD44H11 | NPN | TO-252 | 80V | 8A | 1.75W |
| MJD31C | NPN | TO-252 | 100V | 3A | 1.56W |
| MJD31CQ | NPN | TO-252 | 100V | 3A | 1.6W |
| 2SD1802T | NPN | TO-252 | 50V | 3A | 1W |
| MJD44H11T4G-DW | NPN | TO-252 | 80V | 8A | 20W |
| 2SD882(TO-252) | NPN | TO-252 | 30V | 3A | 1.25W |
| 2SD1816L-R-TN3-R | NPN | TO-252 | 100V | 4A | 1W |