HL2300 MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level R+O
Vds Max
20V
Id Max
4.5A
Rds(on)
20mΩ@4.5V
Vgs(th)
600mV

Quick Reference

The HL2300 is an N-Channel MOSFET in a SOT-23 package, manufactured by R+O. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)4.5AMax current handling
Power Dissipation (Pd)1WMax thermal limit
On-Resistance (Rds(on))20mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))600mVVoltage required to turn on
Gate Charge (Qg)6.06nC@4.5VSwitching energy
Input Capacitance (Ciss)418pFInternal gate capacitance
Output Capacitance (Coss)82pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HL2312 N-Channel SOT-23 20V 5.5A 19.5mΩ@4.5V 620mV
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DMG6968U-7 N-Channel SOT-23 20V 6.5A 21mΩ@4.5V 900mV
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SI2312HE3-TP N-Channel SOT-23 20V 5A 31.8mΩ@4.5V 1V
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SI2312CDS-T1-GE3 N-Channel SOT-23 20V 6A 41.4mΩ@1.8V 1V
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AO3400-TD N-Channel SOT-23 30V 5.8A 28mΩ@10V 900mV
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SI2336DS-T1-GE3 N-Channel SOT-23 30V 5.2A 42mΩ@4.5V 1V
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