SI2312CDS-T1-GE3 MOSFET Datasheet & Specifications
N-Channel
SOT-23
Logic-Level
VISHAY
Vds Max
20V
Id Max
6A
Rds(on)
41.4mΩ@1.8V
Vgs(th)
1V
Quick Reference
The SI2312CDS-T1-GE3 is an N-Channel MOSFET in a SOT-23 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 6A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6A | Max current handling |
| Power Dissipation (Pd) | 2.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 41.4mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 18nC@5V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI2312M-6AF | N-Channel | SOT-23 | 20V | 6.8A | 16mΩ@4.5V | 1.2V | FOSAN 📄 PDF |
| SI2300A | N-Channel | SOT-23 | 20V | 6A | 21mΩ@4.5V | 1V | UMW 📄 PDF |
| DMG6968U-7 | N-Channel | SOT-23 | 20V | 6.5A | 21mΩ@4.5V | 900mV | DIODES 📄 PDF |
| FDN327N | N-Channel | SOT-23 | 20V | 8A | 120mΩ@1.8V | 1.5V | onsemi 📄 PDF |