SI2312M-6AF MOSFET Datasheet & Specifications
N-Channel
SOT-23
Logic-Level
FOSAN
Vds Max
20V
Id Max
6.8A
Rds(on)
16mΩ@4.5V
Vgs(th)
1.2V
Quick Reference
The SI2312M-6AF is an N-Channel MOSFET in a SOT-23 package, manufactured by FOSAN. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 6.8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | FOSAN | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6.8A | Max current handling |
| Power Dissipation (Pd) | 1.25W | Max thermal limit |
| On-Resistance (Rds(on)) | 16mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.2V | Voltage required to turn on |
| Gate Charge (Qg) | 11nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 888pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -40℃~+85℃ | Safe junction temperature range |