SI2300A MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level UMW
Vds Max
20V
Id Max
6A
Rds(on)
21mΩ@4.5V
Vgs(th)
1V

Quick Reference

The SI2300A is an N-Channel MOSFET in a SOT-23 package, manufactured by UMW. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 6A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerUMWOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)6AMax current handling
Power Dissipation (Pd)1.25WMax thermal limit
On-Resistance (Rds(on))21mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)7.7nC@4.5VSwitching energy
Input Capacitance (Ciss)574pFInternal gate capacitance
Output Capacitance (Coss)70pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI2312M-6AF N-Channel SOT-23 20V 6.8A 16mΩ@4.5V 1.2V
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DMG6968U-7 N-Channel SOT-23 20V 6.5A 21mΩ@4.5V 900mV
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SI2312CDS-T1-GE3 N-Channel SOT-23 20V 6A 41.4mΩ@1.8V 1V
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FDN327N N-Channel SOT-23 20V 8A 120mΩ@1.8V 1.5V
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