SI2336DS-T1-GE3 MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level VISHAY
Vds Max
30V
Id Max
5.2A
Rds(on)
42mΩ@4.5V
Vgs(th)
1V

Quick Reference

The SI2336DS-T1-GE3 is an N-Channel MOSFET in a SOT-23 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 5.2A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)5.2AMax current handling
Power Dissipation (Pd)1.25WMax thermal limit
On-Resistance (Rds(on))42mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)5.7nCSwitching energy
Input Capacitance (Ciss)560pFInternal gate capacitance
Output Capacitance (Coss)60pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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