MDD3400 MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level MDD(Microdiode Semiconductor)
Vds Max
30V
Id Max
5.8A
Rds(on)
20mΩ@10V
Vgs(th)
800mV

Quick Reference

The MDD3400 is an N-Channel MOSFET in a SOT-23 package, manufactured by MDD(Microdiode Semiconductor). It supports a drain-source breakdown voltage of 30V and a continuous drain current of 5.8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMDD(Microdiode Semiconductor)Original Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)5.8AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
On-Resistance (Rds(on))20mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))800mVVoltage required to turn on
Gate Charge (Qg)10.5nC@4.5VSwitching energy
Input Capacitance (Ciss)635pFInternal gate capacitance
Output Capacitance (Coss)135pFInternal output capacitance
Operating Temp-50℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
AO3400 N-Channel SOT-23 30V 5.8A 21mΩ@10V 1V
ElecSuper 📄 PDF
FS3400MLT1 A09T N-Channel SOT-23 30V 5.8A 25mΩ@4.5V 900mV
FOSAN 📄 PDF
AO3400 N-Channel SOT-23 30V 5.8A 25mΩ@4.5V 900mV
FOSAN 📄 PDF
AO3400-TD N-Channel SOT-23 30V 5.8A 28mΩ@10V 900mV
TDSEMIC 📄 PDF