SI2312BDS-T1-GE3 MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level VISHAY
Vds Max
20V
Id Max
5A
Rds(on)
47mΩ@1.8V
Vgs(th)
850mV

Quick Reference

The SI2312BDS-T1-GE3 is an N-Channel MOSFET in a SOT-23 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)5AMax current handling
Power Dissipation (Pd)750mWMax thermal limit
On-Resistance (Rds(on))47mΩ@1.8VResistance when turned fully on
Gate Threshold (Vgs(th))850mVVoltage required to turn on
Gate Charge (Qg)12nC@4.5VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI2312M-6AF N-Channel SOT-23 20V 6.8A 16mΩ@4.5V 1.2V
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HL2312 N-Channel SOT-23 20V 5.5A 19.5mΩ@4.5V 620mV
SI2300A N-Channel SOT-23 20V 6A 21mΩ@4.5V 1V
DMG6968U-7 N-Channel SOT-23 20V 6.5A 21mΩ@4.5V 900mV
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SI2312HE3-TP N-Channel SOT-23 20V 5A 31.8mΩ@4.5V 1V
SI2312CDS-T1-GE3 N-Channel SOT-23 20V 6A 41.4mΩ@1.8V 1V
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MDD3400 N-Channel SOT-23 30V 5.8A 20mΩ@10V 800mV
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HL3400 N-Channel SOT-23 30V 5.6A 21mΩ@10V
25mΩ@4.5V
33mΩ@2.5V
900mV
AO3400 N-Channel SOT-23 30V 5.8A 21mΩ@10V 1V
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FS3400MLT1 A09T N-Channel SOT-23 30V 5.8A 25mΩ@4.5V 900mV
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AO3400 N-Channel SOT-23 30V 5.8A 25mΩ@4.5V 900mV
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AO3400-TD N-Channel SOT-23 30V 5.8A 28mΩ@10V 900mV
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DO3400D N-Channel SOT-23 30V 5A 30mΩ@10V 1.2V
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SI2336DS-T1-GE3 N-Channel SOT-23 30V 5.2A 42mΩ@4.5V 1V
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