HL2312 MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level R+O
Vds Max
20V
Id Max
5.5A
Rds(on)
19.5mΩ@4.5V
Vgs(th)
620mV

Quick Reference

The HL2312 is an N-Channel MOSFET in a SOT-23 package, manufactured by R+O. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 5.5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)5.5AMax current handling
Power Dissipation (Pd)1.2WMax thermal limit
On-Resistance (Rds(on))19.5mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))620mVVoltage required to turn on
Gate Charge (Qg)6nC@4.5VSwitching energy
Input Capacitance (Ciss)418pFInternal gate capacitance
Output Capacitance (Coss)82pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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