WNM2016A-3/TR MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level WILLSEMI
Vds Max
20V
Id Max
4.7A
Rds(on)
33mΩ@4.5V
Vgs(th)
650mV

Quick Reference

The WNM2016A-3/TR is an N-Channel MOSFET in a SOT-23 package, manufactured by WILLSEMI. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.7A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerWILLSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)4.7AMax current handling
Power Dissipation (Pd)1.4WMax thermal limit
On-Resistance (Rds(on))33mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))650mVVoltage required to turn on
Gate Charge (Qg)4.2nC@4.5VSwitching energy
Input Capacitance (Ciss)247pFInternal gate capacitance
Output Capacitance (Coss)53pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HL2312 N-Channel SOT-23 20V 5.5A 19.5mΩ@4.5V 620mV
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SI2312HE3-TP N-Channel SOT-23 20V 5A 31.8mΩ@4.5V 1V
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SI2312BDS-T1-GE3 N-Channel SOT-23 20V 5A 47mΩ@1.8V 850mV
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MDD3400 N-Channel SOT-23 30V 5.8A 20mΩ@10V 800mV
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AO3400-TD N-Channel SOT-23 30V 5.8A 28mΩ@10V 900mV
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SI2336DS-T1-GE3 N-Channel SOT-23 30V 5.2A 42mΩ@4.5V 1V
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