BD140 Transistor Datasheet & Specifications

NPN TO-126 General Purpose HXY MOSFET
VCEO
80V
Ic Max
1.5A
Pd Max
1W
hFE Gain
200

Quick Reference

The BD140 is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 80V breakdown voltage and 1.5A continuous collector current. Download the BD140 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1.5ACollector current
Pd1WPower dissipation
DC Current Gain200hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat500mV@1.5A,0.15ASaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
BD237STU-HXY NPN TO-126 100V 15A 1W
BD139 NPN TO-126 80V 1.5A 12.5W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-126 400V 2A 30W
YFW13003 NPN TO-126 480V 1.5A 1.25W
TTC004B,Q NPN TO-126 160V 1.5A 1.5W
BD681 NPN TO-126 100V 4A 2W
3DD4244DM NPN TO-126 400V 3A 60W