BD139 Transistor Datasheet & Specifications

NPN TO-126 High Power ST
VCEO
80V
Ic Max
1.5A
Pd Max
12.5W
hFE Gain
63

Quick Reference

The BD139 is a NPN bipolar transistor in a TO-126 package by ST. This datasheet provides complete specifications including 80V breakdown voltage and 1.5A continuous collector current. Download the BD139 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1.5ACollector current
Pd12.5WPower dissipation
DC Current Gain63hFE / Beta
Frequency-Transition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
BD140 NPN TO-126 80V 1.5A 1W
BD237STU-HXY NPN TO-126 100V 15A 1W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-126 400V 2A 30W
YFW13003 NPN TO-126 480V 1.5A 1.25W
TTC004B,Q NPN TO-126 160V 1.5A 1.5W
BD681 NPN TO-126 100V 4A 2W
3DD4244DM NPN TO-126 400V 3A 60W