KSE13003-AS-HXY Transistor Datasheet & Specifications
NPN
TO-126
General Purpose
HXY MOSFET
VCEO
500V
Ic Max
1.5A
Pd Max
1.25W
hFE Gain
25
Quick Reference
The KSE13003-AS-HXY is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 500V breakdown voltage and 1.5A continuous collector current. Download the KSE13003-AS-HXY datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 500V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | 25 | hFE / Beta |
| Frequency | 5MHz | Transition speed (fT) |
| VCEsat | 600mV@1A,0.2A | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | 1mA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ST13003-K-HXY | NPN | TO-126 | 500V | 1.5A | 1.25W |