BD237STU-HXY Transistor Datasheet & Specifications
NPN
TO-126
General Purpose
HXY MOSFET
VCEO
100V
Ic Max
15A
Pd Max
1W
hFE Gain
-
Quick Reference
The BD237STU-HXY is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 100V breakdown voltage and 15A continuous collector current. Download the BD237STU-HXY datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 500mV@2A,0.2A | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |