3DD4244DM Transistor Datasheet & Specifications
NPN
TO-126
High Power
Jilin Sino-Microelectronics
VCEO
400V
Ic Max
3A
Pd Max
60W
hFE Gain
20
Quick Reference
The 3DD4244DM is a NPN bipolar transistor in a TO-126 package by Jilin Sino-Microelectronics. This datasheet provides complete specifications including 400V breakdown voltage and 3A continuous collector current. Download the 3DD4244DM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Jilin Sino-Microelectronics | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 60W | Power dissipation |
| DC Current Gain | 20 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | 5uA | Leakage (ICBO) |
| Temp | - | Operating temp |