TTC004B,Q Transistor Datasheet & Specifications

NPN TO-126 General Purpose TOSHIBA
VCEO
160V
Ic Max
1.5A
Pd Max
1.5W
hFE Gain
140

Quick Reference

The TTC004B,Q is a NPN bipolar transistor in a TO-126 package by TOSHIBA. This datasheet provides complete specifications including 160V breakdown voltage and 1.5A continuous collector current. Download the TTC004B,Q datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic1.5ACollector current
Pd1.5WPower dissipation
DC Current Gain140hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-126 400V 2A 30W
YFW13003 NPN TO-126 480V 1.5A 1.25W
3DD4244DM NPN TO-126 400V 3A 60W