3DD4242DM-126 Transistor Datasheet & Specifications
NPN
TO-126
High Power
Jilin Sino-Microelectronics
VCEO
400V
Ic Max
1.5A
Pd Max
20W
hFE Gain
22
Quick Reference
The 3DD4242DM-126 is a NPN bipolar transistor in a TO-126 package by Jilin Sino-Microelectronics. This datasheet provides complete specifications including 400V breakdown voltage and 1.5A continuous collector current. Download the 3DD4242DM-126 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Jilin Sino-Microelectronics | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 20W | Power dissipation |
| DC Current Gain | 22 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | 5uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ST13003-K-HXY | NPN | TO-126 | 500V | 1.5A | 1.25W |
| KSE13003-AS-HXY | NPN | TO-126 | 500V | 1.5A | 1.25W |
| 13003 | NPN | TO-126 | 400V | 2A | 30W |
| YFW13003 | NPN | TO-126 | 480V | 1.5A | 1.25W |
| 3DD4244DM | NPN | TO-126 | 400V | 3A | 60W |