BD681 Transistor Datasheet & Specifications
NPN
TO-126
General Purpose
HXY MOSFET
VCEO
100V
Ic Max
4A
Pd Max
2W
hFE Gain
8000
Quick Reference
The BD681 is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the BD681 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 2W | Power dissipation |
| DC Current Gain | 8000 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 1.8V@3A,12mA | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BD237STU-HXY | NPN | TO-126 | 100V | 15A | 1W |
| BD681 | NPN | TO-126 | 100V | 4A | 40W |