BD13916STU-HXY Transistor Datasheet & Specifications

NPN TO-126 General Purpose HXY MOSFET
VCEO
80V
Ic Max
1.5A
Pd Max
1W
hFE Gain
250

Quick Reference

The BD13916STU-HXY is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 80V breakdown voltage and 1.5A continuous collector current. Download the BD13916STU-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1.5ACollector current
Pd1WPower dissipation
DC Current Gain250hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
BD140 NPN TO-126 80V 1.5A 1W
BD237STU-HXY NPN TO-126 100V 15A 1W
BD139 NPN TO-126 80V 1.5A 12.5W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-126 400V 2A 30W
YFW13003 NPN TO-126 480V 1.5A 1.25W
TTC004B,Q NPN TO-126 160V 1.5A 1.5W
BD681 NPN TO-126 100V 4A 2W