BD139-16 Transistor Datasheet & Specifications

NPN TO-126 High Power YFW
VCEO
80V
Ic Max
1.5A
Pd Max
12.5W
hFE Gain
160

Quick Reference

The BD139-16 is a NPN bipolar transistor in a TO-126 package by YFW. This datasheet provides complete specifications including 80V breakdown voltage and 1.5A continuous collector current. Download the BD139-16 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1.5ACollector current
Pd12.5WPower dissipation
DC Current Gain160hFE / Beta
Frequency-Transition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
BD140 NPN TO-126 80V 1.5A 1W
BD237STU-HXY NPN TO-126 100V 15A 1W
BD139 NPN TO-126 80V 1.5A 12.5W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-126 400V 2A 30W
YFW13003 NPN TO-126 480V 1.5A 1.25W
TTC004B,Q NPN TO-126 160V 1.5A 1.5W
BD681 NPN TO-126 100V 4A 2W