2SD1733TLR Transistor Datasheet & Specifications

NPN TO-252 High Power ROHM
VCEO
80V
Ic Max
1A
Pd Max
10W
hFE Gain
120

Quick Reference

The 2SD1733TLR is a NPN bipolar transistor in a TO-252 package by ROHM. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the 2SD1733TLR datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1ACollector current
Pd10WPower dissipation
DC Current Gain120hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJD44H11T4G NPN TO-252 80V 8A 50W
MJD44H11 NPN TO-252 80V 8A 1.75W
MJD31C NPN TO-252 100V 3A 1.56W
13003 NPN TO-252 420V 1A 1.2W
MJD31CQ NPN TO-252 100V 3A 1.6W
2SCR574D3TL1 NPN TO-252 80V 2A 10W
MJD44H11T4G-DW NPN TO-252 80V 8A 20W
2SD1816L-R-TN3-R NPN TO-252 100V 4A 1W
BRMJD112Q NPN TO-252 100V 2A 20W
2SD669AD-C NPN TO-252 160V 1.5A 10W