BRMJD112Q Transistor Datasheet & Specifications

NPN TO-252 High Power BLUE ROCKET
VCEO
100V
Ic Max
2A
Pd Max
20W
hFE Gain
1000

Quick Reference

The BRMJD112Q is a NPN bipolar transistor in a TO-252 package by BLUE ROCKET. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the BRMJD112Q datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerBLUE ROCKETOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic2ACollector current
Pd20WPower dissipation
DC Current Gain1000hFE / Beta
Frequency25MHzTransition speed (fT)
VCEsat3VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current20uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJD31C NPN TO-252 100V 3A 1.56W
MJD31CQ NPN TO-252 100V 3A 1.6W
2SD1816L-R-TN3-R NPN TO-252 100V 4A 1W
BU406D NPN TO-252 150V 7A 65W
MJD122(MS) NPN TO-252 100V 6A 1.25W
2SD1816L-S-TN3-R NPN TO-252 100V 4A 1W
MJD122 NPN TO-252 100V 5A 65W
MJD41C(MS) NPN TO-252 100V 9A 1.25W
BTC1510F3L-TN3-R NPN TO-252 150V 10A 1.1W
MJD122 NPN TO-252 100V 8A 1.75W