STW20NM60FD MOSFET Datasheet & Specifications

N-Channel TO-247 High-Voltage ST
Vds Max
600V
Id Max
20A
Rds(on)
290mΩ@10V
Vgs(th)
5V

Quick Reference

The STW20NM60FD is an N-Channel MOSFET in a TO-247 package, manufactured by ST. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 20A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-247Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)20AMax current handling
Power Dissipation (Pd)214WMax thermal limit
On-Resistance (Rds(on))290mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)52nC@10VSwitching energy
Input Capacitance (Ciss)1.3nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-65℃~+150℃Safe junction temperature range

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