MMQ60R044RFTH MOSFET Datasheet & Specifications

N-Channel TO-247 High-Voltage MagnaChip Semicon
Vds Max
600V
Id Max
60A
Rds(on)
38mΩ@10V
Vgs(th)
4V

Quick Reference

The MMQ60R044RFTH is an N-Channel MOSFET in a TO-247 package, manufactured by MagnaChip Semicon. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMagnaChip SemiconOriginal Manufacturer
PackageTO-247Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)378.8WMax thermal limit
On-Resistance (Rds(on))38mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)154nC@10VSwitching energy
Input Capacitance (Ciss)6nFInternal gate capacitance
Output Capacitance (Coss)150pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
GBS60037TOB N-Channel TO-247 600V 60A 34mΩ@10V 4V
GOSEMICON 📄 PDF
GBS65041TOB N-Channel TO-247 650V 66A 34mΩ@10V 4V
GOSEMICON 📄 PDF