GBS60037TOB MOSFET Datasheet & Specifications

N-Channel TO-247 High-Voltage GOSEMICON
Vds Max
600V
Id Max
60A
Rds(on)
34mΩ@10V
Vgs(th)
4V

Quick Reference

The GBS60037TOB is an N-Channel MOSFET in a TO-247 package, manufactured by GOSEMICON. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerGOSEMICONOriginal Manufacturer
PackageTO-247Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)300WMax thermal limit
On-Resistance (Rds(on))34mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)146nC@10VSwitching energy
Input Capacitance (Ciss)6.3nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
MMQ60R044RFTH N-Channel TO-247 600V 60A 38mΩ@10V 4V
MagnaChip Sem... 📄 PDF
GBS65041TOB N-Channel TO-247 650V 66A 34mΩ@10V 4V
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