WGA65R099G MOSFET Datasheet & Specifications
N-Channel
TO-247
Logic-Level
Wild Goose
Vds Max
600V
Id Max
20.9A
Rds(on)
115mΩ@10V
Vgs(th)
2V
Quick Reference
The WGA65R099G is an N-Channel MOSFET in a TO-247 package, manufactured by Wild Goose. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 20.9A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Wild Goose | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 600V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20.9A | Max current handling |
| Power Dissipation (Pd) | 255W | Max thermal limit |
| On-Resistance (Rds(on)) | 115mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 2.72nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.77nF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HC3M0045065D | N-Channel | TO-247 | 650V | 49A | 33mΩ@20V | 2V | HXY MOSFET 📄 PDF |