YJD212080NCTG1 MOSFET Datasheet & Specifications
N-Channel
TO-247
High-Voltage
YANGJIE
Vds Max
1.2kV
Id Max
38A
Rds(on)
80mΩ
Vgs(th)
3.6V
Quick Reference
The YJD212080NCTG1 is an N-Channel MOSFET in a TO-247 package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 38A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.2kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 38A | Max current handling |
| Power Dissipation (Pd) | 220W | Max thermal limit |
| On-Resistance (Rds(on)) | 80mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.6V | Voltage required to turn on |
| Gate Charge (Qg) | 41nC | Switching energy |
| Input Capacitance (Ciss) | 890pF | Internal gate capacitance |
| Output Capacitance (Coss) | 58pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP52N120CTF | N-Channel | TO-247 | 1.2kV | 52A | 32mΩ@18V | 2.8V | Siliup 📄 PDF |