IXFH50N85X MOSFET Datasheet & Specifications

N-Channel TO-247 High-Voltage Littelfuse/IXYS
Vds Max
850V
Id Max
50A
Rds(on)
105mΩ@10V
Vgs(th)
5.5V

Quick Reference

The IXFH50N85X is an N-Channel MOSFET in a TO-247 package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 850V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerLittelfuse/IXYSOriginal Manufacturer
PackageTO-247Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)850VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)-Max thermal limit
On-Resistance (Rds(on))105mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5.5VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)4.48nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SP52N120CTF N-Channel TO-247 1.2kV 52A 32mΩ@18V 2.8V
Siliup 📄 PDF