NTHL067N65S3H MOSFET Datasheet & Specifications
N-Channel
TO-247
High-Voltage
onsemi
Vds Max
650V
Id Max
40A
Rds(on)
67mΩ@10V
Vgs(th)
4V
Quick Reference
The NTHL067N65S3H is an N-Channel MOSFET in a TO-247 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 40A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 40A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| On-Resistance (Rds(on)) | 67mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 80nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.75nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HC3M0045065D | N-Channel | TO-247 | 650V | 49A | 33mΩ@20V | 2V | HXY MOSFET 📄 PDF |
| GBS65041TOB | N-Channel | TO-247 | 650V | 66A | 34mΩ@10V | 4V | GOSEMICON 📄 PDF |
| GBS65060TOB | N-Channel | TO-247 | 650V | 50A | 55mΩ@10V | 4V | GOSEMICON 📄 PDF |
| SP52N120CTF | N-Channel | TO-247 | 1.2kV | 52A | 32mΩ@18V | 2.8V | Siliup 📄 PDF |