MMBF170LT1G MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level onsemi
Vds Max
60V
Id Max
500mA
Rds(on)
5Ω@10V
Vgs(th)
3V

Quick Reference

The MMBF170LT1G is an N-Channel MOSFET in a SOT-23 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 500mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)500mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
On-Resistance (Rds(on))5Ω@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)60pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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SI2310A N-Channel SOT-23 60V 3A 80mΩ@10V 3V
SI2308A N-Channel SOT-23 60V 3A 80mΩ@10V
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FDN5630 N-Channel SOT-23 60V 1.7A 100mΩ@10V 3V
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NCE6003X N-Channel SOT-23 60V 3A 110mΩ@4.5V 2V
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SI2310 N-Channel SOT-23 60V 3A 125mΩ@4.5V 2V
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SQ2308CES-T1_GE3 N-Channel SOT-23 60V 2.3A 325mΩ@10V 2.5V
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WNM6001-3/TR N-Channel SOT-23 60V 500mA 1.7Ω@4.5V 2V
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5N10-MS N-Channel SOT-23 100V 5A 90mΩ@10V 1.5V
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SI2392ADS-T1-GE3 N-Channel SOT-23 100V 3.1A 126mΩ@10V 3V
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AP10TN135N N-Channel SOT-23 100V 2.1A 135mΩ@10V 3V
NCE0102 N-Channel SOT-23 100V 2A 240mΩ@10V 2.5V
SI2328A N-Channel SOT-23 100V 1.5A 245mΩ@10V
265mΩ@4.5V
2V;4V
SI2324DS-T1-GE3 N-Channel SOT-23 100V 2.3A 278mΩ@4.5V 2.8V
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DO3N10B N-Channel SOT-23 100V 3A 280mΩ@10V 2.5V
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SQ2398ES-T1_GE3 N-Channel SOT-23 100V 1.6A 300mΩ@10V 3.5V
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