WNM6001-3/TR MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level WILLSEMI
Vds Max
60V
Id Max
500mA
Rds(on)
1.7Ω@4.5V
Vgs(th)
2V

Quick Reference

The WNM6001-3/TR is an N-Channel MOSFET in a SOT-23 package, manufactured by WILLSEMI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 500mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerWILLSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)500mAMax current handling
Power Dissipation (Pd)690mWMax thermal limit
On-Resistance (Rds(on))1.7Ω@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)1.2nC@10VSwitching energy
Input Capacitance (Ciss)23.37pFInternal gate capacitance
Output Capacitance (Coss)7.33pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI2310M-6AF N-Channel SOT-23 60V 3A 86mΩ@10V 1.3V
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NCE6003X N-Channel SOT-23 60V 3A 110mΩ@4.5V 2V
SI2310 N-Channel SOT-23 60V 3A 125mΩ@4.5V 2V
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SL2310 N-Channel SOT-23 60V 3A 125mΩ@4.5V 2V
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SQ2308CES-T1_GE3 N-Channel SOT-23 60V 2.3A 325mΩ@10V 2.5V
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5N10-MS N-Channel SOT-23 100V 5A 90mΩ@10V 1.5V
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NCE0102 N-Channel SOT-23 100V 2A 240mΩ@10V 2.5V
SI2328A N-Channel SOT-23 100V 1.5A 245mΩ@10V
265mΩ@4.5V
2V;4V
DO3N10B N-Channel SOT-23 100V 3A 280mΩ@10V 2.5V
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