SI2310M-6AF MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level FOSAN
Vds Max
60V
Id Max
3A
Rds(on)
86mΩ@10V
Vgs(th)
1.3V

Quick Reference

The SI2310M-6AF is an N-Channel MOSFET in a SOT-23 package, manufactured by FOSAN. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerFOSANOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)3AMax current handling
Power Dissipation (Pd)1.2WMax thermal limit
On-Resistance (Rds(on))86mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.3VVoltage required to turn on
Gate Charge (Qg)11nCSwitching energy
Input Capacitance (Ciss)410pFInternal gate capacitance
Output Capacitance (Coss)50pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BRCS2310MA N-Channel SOT-23 60V 3A 94mΩ@4.5V 1.8V
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5N10-MS N-Channel SOT-23 100V 5A 90mΩ@10V 1.5V
MSKSEMI 📄 PDF