HL2310A MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level R+O
Vds Max
60V
Id Max
3A
Rds(on)
90mΩ@10V;125mΩ@4.5V
Vgs(th)
2V

Quick Reference

The HL2310A is an N-Channel MOSFET in a SOT-23 package, manufactured by R+O. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)3AMax current handling
Power Dissipation (Pd)1.2WMax thermal limit
On-Resistance (Rds(on))90mΩ@10V;125mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)6nC@4.5VSwitching energy
Input Capacitance (Ciss)247pFInternal gate capacitance
Output Capacitance (Coss)34pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI2310M-6AF N-Channel SOT-23 60V 3A 86mΩ@10V 1.3V
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NCE6003X N-Channel SOT-23 60V 3A 110mΩ@4.5V 2V
SI2310 N-Channel SOT-23 60V 3A 125mΩ@4.5V 2V
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SL2310 N-Channel SOT-23 60V 3A 125mΩ@4.5V 2V
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5N10-MS N-Channel SOT-23 100V 5A 90mΩ@10V 1.5V
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DO3N10B N-Channel SOT-23 100V 3A 280mΩ@10V 2.5V
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