SI2310 MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level GOODWORK
Vds Max
60V
Id Max
3A
Rds(on)
125mΩ@4.5V
Vgs(th)
2V

Quick Reference

The SI2310 is an N-Channel MOSFET in a SOT-23 package, manufactured by GOODWORK. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)3AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
On-Resistance (Rds(on))125mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)6nC@4.5VSwitching energy
Input Capacitance (Ciss)247pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI2310M-6AF N-Channel SOT-23 60V 3A 86mΩ@10V 1.3V
FOSAN 📄 PDF
HL2310A N-Channel SOT-23 60V 3A 90mΩ@10V
125mΩ@4.5V
2V
BRCS2310MA N-Channel SOT-23 60V 3A 94mΩ@4.5V 1.8V
BLUE ROCKET 📄 PDF
NCE6003X N-Channel SOT-23 60V 3A 110mΩ@4.5V 2V
SL2310 N-Channel SOT-23 60V 3A 125mΩ@4.5V 2V
Slkor 📄 PDF
5N10-MS N-Channel SOT-23 100V 5A 90mΩ@10V 1.5V
MSKSEMI 📄 PDF
DO3N10B N-Channel SOT-23 100V 3A 280mΩ@10V 2.5V
DOINGTER 📄 PDF