NCE0102 MOSFET Datasheet & Specifications
N-Channel
SOT-23
Logic-Level
NCE
Vds Max
100V
Id Max
2A
Rds(on)
240mΩ@10V
Vgs(th)
2.5V
Quick Reference
The NCE0102 is an N-Channel MOSFET in a SOT-23 package, manufactured by NCE. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 2A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | NCE | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 2A | Max current handling |
| Power Dissipation (Pd) | 1.25W | Max thermal limit |
| On-Resistance (Rds(on)) | 240mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 5.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 190pF | Internal gate capacitance |
| Output Capacitance (Coss) | 22pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 5N10-MS | N-Channel | SOT-23 | 100V | 5A | 90mΩ@10V | 1.5V | MSKSEMI 📄 PDF |
| SI2392ADS-T1-GE3 | N-Channel | SOT-23 | 100V | 3.1A | 126mΩ@10V | 3V | VISHAY 📄 PDF |
| AP10TN135N | N-Channel | SOT-23 | 100V | 2.1A | 135mΩ@10V | 3V | APEC 📄 PDF |
| SI2324DS-T1-GE3 | N-Channel | SOT-23 | 100V | 2.3A | 278mΩ@4.5V | 2.8V | VISHAY 📄 PDF |
| DO3N10B | N-Channel | SOT-23 | 100V | 3A | 280mΩ@10V | 2.5V | DOINGTER 📄 PDF |
| AS2324 | N-Channel | SOT-23 | 100V | 2A | 310mΩ@4.5V | 3V | AnBon 📄 PDF |