DMN6075S-7 MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level DIODES
Vds Max
60V
Id Max
2.5A
Rds(on)
120mΩ@4.5V
Vgs(th)
3V

Quick Reference

The DMN6075S-7 is an N-Channel MOSFET in a SOT-23 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 2.5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)2.5AMax current handling
Power Dissipation (Pd)700mWMax thermal limit
On-Resistance (Rds(on))120mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)12.3nC@10VSwitching energy
Input Capacitance (Ciss)606pFInternal gate capacitance
Output Capacitance (Coss)32.6pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI2310A N-Channel SOT-23 60V 3A 80mΩ@10V 3V
SI2308A N-Channel SOT-23 60V 3A 80mΩ@10V
95mΩ@4.5V
3V
SI2310M-6AF N-Channel SOT-23 60V 3A 86mΩ@10V 1.3V
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HL2310A N-Channel SOT-23 60V 3A 90mΩ@10V
125mΩ@4.5V
2V
BRCS2310MA N-Channel SOT-23 60V 3A 94mΩ@4.5V 1.8V
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NCE6003X N-Channel SOT-23 60V 3A 110mΩ@4.5V 2V
SI2310 N-Channel SOT-23 60V 3A 125mΩ@4.5V 2V
GOODWORK 📄 PDF
SL2310 N-Channel SOT-23 60V 3A 125mΩ@4.5V 2V
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5N10-MS N-Channel SOT-23 100V 5A 90mΩ@10V 1.5V
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SI2392ADS-T1-GE3 N-Channel SOT-23 100V 3.1A 126mΩ@10V 3V
VISHAY 📄 PDF
DO3N10B N-Channel SOT-23 100V 3A 280mΩ@10V 2.5V
DOINGTER 📄 PDF