LBSS84ELT1G MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level LRC
Vds Max
60V
Id Max
130mA
Rds(on)
6ฮฉ@5V
Vgs(th)
2V

Quick Reference

The LBSS84ELT1G is an P-Channel MOSFET in a SOT-23 package, manufactured by LRC. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 130mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)130mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
On-Resistance (Rds(on))6ฮฉ@5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)1.1nC@4.5VSwitching energy
Input Capacitance (Ciss)45pFInternal gate capacitance
Output Capacitance (Coss)4pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

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4.5ฮฉ@4.5V
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Infineon ๐Ÿ“„ PDF
SQ2337CES-T1_GE3 P-Channel SOT-23 80V 2.2A 241mฮฉ@10V 2V
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DMP10H4D2S-7 P-Channel SOT-23 100V 270mA 2.8ฮฉ@10V 2.3V
SI2325DS-T1-GE3 P-Channel SOT-23 150V 690mA 1.2ฮฉ@10V 2.5V
UF07P15G-AE3-R P-Channel SOT-23 150V 700mA 3.1ฮฉ@10V 2V