SQ2361CEES-T1_GE3 MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level VISHAY
Vds Max
60V
Id Max
2.8A
Rds(on)
230mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The SQ2361CEES-T1_GE3 is an P-Channel MOSFET in a SOT-23 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 2.8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)2.8AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))230mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)15nCSwitching energy
Input Capacitance (Ciss)620pFInternal gate capacitance
Output Capacitance (Coss)80pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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