TSM2309CX RFG MOSFET Datasheet & Specifications
P-Channel
SOT-23
Logic-Level
Taiwan Semiconductor
Vds Max
60V
Id Max
3.1A
Rds(on)
240mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The TSM2309CX RFG is an P-Channel MOSFET in a SOT-23 package, manufactured by Taiwan Semiconductor. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 3.1A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Taiwan Semiconductor | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.1A | Max current handling |
| Power Dissipation (Pd) | 1.56W | Max thermal limit |
| On-Resistance (Rds(on)) | 240mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 8.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 425pF | Internal gate capacitance |
| Output Capacitance (Coss) | 35pF | Internal output capacitance |
| Operating Temp | -50℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BRCS5P06MA | P-Channel | SOT-23 | 60V | 5A | 103mΩ@4.5V | 1.5V | BLUE ROCKET 📄 PDF |